Description of Beryllium Oxide Ceramics:
Beryllium oxide belongs to cubic crystal system, with a density of 3.03g/cm3 and a melting point of 2570 ℃. It has high thermal conductivity and thermal conductivity λ It is 200-250W/(m · K), and has good thermal shock resistance. The dielectric constant is 6-7 (0.1MHz), and the dielectric loss tangent is about 4 × 10-4 (0.1GHz), can be used for a long time under 1800 ℃ vacuum, 2000 ℃ inert atmosphere and 1800 ℃ oxidation atmosphere.
Beryllium oxide ceramic is an advanced ceramic with beryllium oxide (BeO) as the main component. It is characterized by high thermal conductivity, high melting point, high strength, high insulation, high chemical and thermal stability, low dielectric constant, low dielectric loss and good process adaptability. It is a structural ceramic material with excellent performance and is widely used in special metallurgy, aerospace, vacuum electronics, nuclear technology, microelectronics and optoelectronics, Especially in high-power semiconductor devices, high-power integrated circuits, high-power microwave vacuum devices and nuclear reactors, it has been the mainstream ceramic materials for preparing high thermal conductivity components.
Due to its excellent thermal, electrical, nuclear and mechanical properties, beryllium oxide ceramics can be used as carrier parts and assemblies in the aerospace field, as a neutron retarder and radiation protection material in atomic reactors in the nuclear industry, as a high-performance, high-power microwave package, as well as a wide band high-power electric vacuum device, and as a crucible for melting rare metals and precious metals, such as uranium and plutonium, It can also be used as refractory material for supporting rods of heating elements, etc., and has an excellent application in various fields.
Technical Parameter of Beryllium Oxide Ceramics:
|Beryllium oxide content||%||≥99|
|Thermal shock resistance||Pass|
|Coefficient of linear expansion||20℃-500℃||×10-6 /℃||7-8.5|
|Tangent value of dielectric loss angle||1MHz 20℃||6.5-7.5|
|Volume resistivity||10GHz 20℃||6.5-7.5|
|Breakdown strength||1MHz 20℃||×10-4||≤4|
|Chemical stability||10GHz 20℃||×10-4||≤8|
|1||99 Beryllium oxide ceramic substrate||Solid state electronics, various high-power devices, optical communication|
|2||99 Beryllium oxide ceramic metallized substrate||Solid state electronics, various high-power devices, optical communication|
|3||99 Beryllium oxide ceramic polishing substrate||Solid state electronics, various high-power devices, optical communication|
|4||97 Beryllium oxide ceramic substrate||Solid state electronics, various high-power devices, optical communication|
|5||99 Beryllium oxide ceramic pole||High power traveling wave tube|
|6||99 Beryllium oxide ceramic tile||High power traveling wave tube|
|7||99 Beryllium oxide ceramic column||High power electronic device|
|8||99 Beryllium oxide ceramic cylinder||Vacuum device|
|9||99 Beryllium oxide ceramic crucible||Melting|
|10||99.5 Beryllium oxide ceramic shaped parts||Nuclear, high power period, vacuum device, microwave|
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